InP-based IC Technologies for Future Lightwave Communication Systems
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概要
- 論文の詳細を見る
- 1999-09-20
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関連論文
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
- 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond (Special Issue on High-Frequency/speed Devices in the 21st Century)
- InP-based IC Technologies for Future Lightwave Communication Systems
- 20-Gbit/s Multiplexer and Demultiplexer ICs Using Production-Level Silicon Bipolar Transistors