Physical and Mathematical Basis for the Crucial Technical Shortcoming of the Split C-V Technique in Thin-SOI MOSFET's
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概要
著者
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Omura Y
Electronics High-technology Research Center And Faculty Of Engineering Kansai University
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Omura Y
Ntt Lsi Laboratories
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Omura Yasuhisa
Electronics Department Kansai University
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- Physical and Mathematical Basis for the Crucial Technical Shortcoming of the Split C-V Technique in Thin-SOI MOSFET's