Omura Y | Ntt Lsi Laboratories

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概要

• 同名の論文著者
• Ntt Lsi Laboratoriesの論文著者

関連著者

• Omura Y

  Ntt Lsi Laboratories

• Omura Yasuhisa

  Electronics Department Kansai University

• Omura Y

  Electronics High-technology Research Center And Faculty Of Engineering Kansai University

• Omura Yasuhisa

  High-technology Research Center And Faculty Of Engineering Kansai University

• Omura Yasuhisa

  High-technology Research Center

• Nakakubo A

  Electronics High-technology Research Center And Faculty Of Engineering Kansai University

• Nakakubo Atsushi

  Electronics, High-Technology Research Center and Faculty of Engineering, Kansai University

• 中辻 博

  京都大学大学院工学研究科

• YANAGI Shin-ichiro

  High-Technology Research Center and Faculty of Engineering, Kansai University

• Yanagi S

  Kansai Univ.

• KADO Yuichi

  NTT Microsystem Integration Laboratories, NTT Corporation

• Omura Yasuhisa

  NTT LSI Laboratories

• Kuribayashi Hiroki

  Corporate R&d Laboratories Pioneer Corporation

• Nakatsuji Hiroshi

  Electronics High-technology Research Center And Faculty Of Engineering Kansai University

• Nakatsuji Hiroshi

  Department Of Synthetic Chemistry And Biological Chemistry Faculty Of Engineering Kyoto University

• Suzuki M

  Kddi Res. And Dev. Lab. Inc. Kamifukuoka‐shi Jpn

• Suzuki Masao

  NTT LSI Laboratories

• Kado Yuichi

  NTT LSI Laboratories

• Koike Keiichi

  NTT LSI Laboratories

• Izumi Katsutoshi

  NTT LSI Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories

• Kado Yuichi

  Ntt Microsystem Integration Laboratories Ntt Corporation

• Koike K

  Ntt Systems Electronics Lab. Atsugi‐shi Jpn

• Tamura Susumu

  High-technology Research Center And Faculty Of Engineering Kansai University

• Nakahara Sumio

  High-technology Research Center And Faculty Of Engineering Kansai University

• Omura Yasuhisa

  Department Of Electronics Kansai University

• KOBAYASHI Hideki

  High-Technology Research Center and Faculty of Engineering, Kansai University

• IIDA Yukio

  High-Technology Research Center and Faculty of Engineering, Kansai University

• Iida Y

  High-technology Research Center And Faculty Of Engineering Kansai University

• NAKAKUBO Atsushi

  High-Technology Research Center and Faculty of Engineering, Kansai University

• Yanagi Shin-ichiro

  High-technology Research Center

• Kobayashi H

  Institute Of Scientific And Industrial Research Osaka University:crest Japan Science And Technology

• Nakatsuji Hiroshi

  High-technology Research Center And Department Of Electronics Faculty Of Engineering Kansai Universi

• Komiya Kenji

  Electronics Department Kansai University

• 清水 明

  Center For Atmospheric And Oceanic Studies Graduate School Of Science Tohoku University

• Nakamori Yasuhiko

  Electronics Department, Kansai University

• Moriguchi Kohei

  Electronics Department, Kansai University

• Moriguchi Kohei

  Electronics Department Kansai University

• Nakamori Yasuhiko

  Electronics Department Kansai University

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著作論文

• A 1GHz/0.9mW CMOS/SIMOX Divide-by 128/129 Dual-Modulus Prescaler Using a Divide-by 2/3 Synchronous Counter
• An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4μm Gate Ultrathin-Film SIMOX Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Single-Mode Silicon Optical Switch with T-Shaped SiO_2 Optical Waveguide as a Control Gate
• Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate
• Quantum Mechanical Influence on Flat-Band Capacitance for Metal-Oxide-Semiconductor Structures with Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation
• Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs
• Quantization Effect in Temperature Dependence of Threshold Voltage of Extremely-Thin SOI MOSFETs
• Physics-based model of quantum-mechanical wave function penetration into thin dielectric films for evaluating modern MOS capacitors
• Effect of Silicon Addtion on Electrical Properties of SrBi2Ta2O9 Thin Films
• Effect of Silicon Addition on Electrical Properties of SrBi_2Ta_2O_9 Thin Films
• A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime
• Proposal of a Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) MOSFET for Deep sub-0.1-μm Channel Regime
• Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime
• Physical and Mathematical Basis for the Crucial Technical Shortcoming of the Split C-V Technique in Thin-SOI MOSFET's

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