Omura Yasuhisa | High-technology Research Center And Faculty Of Engineering Kansai University

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著作論文

Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
Theory of carrier-density-fluctuation-induced transport noise in metal-oxide-semiconductor field-effect transistors
Single-Mode Silicon Optical Switch with T-Shaped SiO_2 Optical Waveguide as a Control Gate
Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate
An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film
Quantum Mechanical Influence on Flat-Band Capacitance in Metal-Oxide-Semiconductor Structures with a Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation
Effect of Silicon Addtion on Electrical Properties of SrBi2Ta2O9 Thin Films
Effect of Silicon Addition on Electrical Properties of SrBi_2Ta_2O_9 Thin Films
A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime
Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime
Analysis of Interface Microstructure Evolution in Separation by IMplanted OXygen(SIMOX)Wafers
Significant Impact of Transport Noise Enhancement in Scaled-Down MOSFET's

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