Komiya Kenji | High-technology Research Center
スポンサーリンク
概要
関連著者
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Komiya Kenji
High-technology Research Center
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Omura Yasuhisa
High-technology Research Center
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Kawamura Akira
High-technology Research Center And Faculty Of Engineering Kansai University
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Nakajima Hidehiko
High-technology Research Center And Faculty Of Engineering Kansai University
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Omura Yasuhisa
High-technology Research Center And Faculty Of Engineering Kansai University
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Nakajima Hidehiko
High-Technology Research Center and Faculty of Engineering, Kansai University
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Kawamura Akira
High-Technology Research Center and Faculty of Engineering, Kansai University
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Komiya Kenji
High-Technology Research Center and Faculty of Engineering, Kansai University
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Komiya Kenji
High-technology Research Center And Faculty Of Engineering Kansai University
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Matsuo Akira
High-Technology Research Center
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Hyodo Yoshinori
High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Nakamori Yasuhiko
High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Komiya Kenji
High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Komiya Kenji
High-Technology Research Center and Faculty of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Nakajima Hidehiko
High-Technology Research Center and Faculty of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
著作論文
- Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Significant initial stress under cyclic application of constant-current stress to thin SiO_2 films
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal–Oxide–Semiconductor Field-Effect Transistor and Performance Perspective
- Physics-Based Analytical Model of Quantum-Mechanical Electron Wave Function Penetration into Thin Dielectric Films and Capacitance Evaluation