Physics-Based Analytical Model of Quantum-Mechanical Electron Wave Function Penetration into Thin Dielectric Films and Capacitance Evaluation
スポンサーリンク
概要
- 論文の詳細を見る
We propose an analytical expression of the electron distribution function inside silicon and SiO2 films under the surface-accumulation condition, to simulate the capacitance of a metal–oxide–semiconductor system. We assume a three-dimensional electron gas system and discuss the penetration of the electron wave function into SiO2 or high-$k$ material films. It is demonstrated that the penetration of the wave function into the insulator film slightly influences the capacitance-voltage characteristics. It is also demonstrated that the penetration of the wave function into high-$k$ materials is deeper than that into SiO2 film for identical equivalent oxide thickness (EOT).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
-
Komiya Kenji
High-technology Research Center
-
Omura Yasuhisa
High-technology Research Center
-
Hyodo Yoshinori
High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
-
Nakamori Yasuhiko
High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
-
Komiya Kenji
High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
関連論文
- Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Theory of carrier-density-fluctuation-induced transport noise in metal-oxide-semiconductor field-effect transistors
- Single-Mode Silicon Optical Switch with T-Shaped SiO_2 Optical Waveguide as a Control Gate
- Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate
- An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film
- Effect of Silicon Addtion on Electrical Properties of SrBi2Ta2O9 Thin Films
- A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime
- Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime
- Analysis of Interface Microstructure Evolution in Separation by IMplanted OXygen(SIMOX)Wafers
- Effect of Silicon Addtion on the Electrical Properties of SrBi2Ta2O9 Thin Films
- Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) : Electnical Properties of Condensed Malter
- Quantitative Evaluation of Quantum Mechanical Influence on Flat-Band Capacitance of Poly-Si/SiO_2/Si Substrate System and the Impact of Oxide Charge Density
- Analysis of Thin Oxide Growth Mechanisms in Partial-Pressure Rapid-Thermal Oxidation of Silicon
- Compact Equivalent-Circuit Model for Snap-Back Phenomena in Ultra-Thin SOI MOSFET's and Practical Guideline for ESD-Protection Device Design
- Two-Dimensional Quantization Effect on Indirect Tunneling in an Insulated-Gate Lateral pn-Junction Structure with a Thin Silicon Layer
- Significant initial stress under cyclic application of constant-current stress to thin SiO_2 films
- Significant Impact of Transport Noise Enhancement in Scaled-Down MOSFET's
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal–Oxide–Semiconductor Field-Effect Transistor and Performance Perspective
- Effect of Silicon Addition on Electrical Properties of SrBi2Ta2O9 Thin Films
- Physics-Based Analytical Model of Quantum-Mechanical Electron Wave Function Penetration into Thin Dielectric Films and Capacitance Evaluation
- Quantum Mechanical Influence on Flat-Band Capacitance in Metal-Oxide-Semiconductor Structures with a Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation
- Single-Mode Silicon Optical Switch with T-Shaped SiO2 Optical Waveguide as a Control Gate