Single-Mode Silicon Optical Switch with T-Shaped SiO2 Optical Waveguide as a Control Gate
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概要
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An electrooptic silicon switch and modulator are reported. A single-mode silicon optical switch with a T-shaped SiO2 optical waveguide as a control gate is studied by electromagnetic field simulation using the finite-difference time-domain method. It has been shown that signal light of $\lambda=1.55$ $\mu$m is attenuated by more than 30 dB under the illumination of control light of $\lambda=0.85$ $\mu$m. For a structure with an interaction length of 1 $\mu$m, it is estimated that the control light power of about 5.5 mW is needed. For a new structure with a long interaction length, the control light power is estimated to be about 44 $\mu$W when 50% of the transferred energy is consumed in the silicon core, the interaction area is 10 $\mu$m long, and the lifetime of carriers is 10 $\mu$s.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2002-04-30
著者
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KOBAYASHI Hideki
High-Technology Research Center and Faculty of Engineering, Kansai University
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IIDA Yukio
High-Technology Research Center and Faculty of Engineering, Kansai University
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Omura Yasuhisa
High-technology Research Center
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Iida Yukio
High-Technology Research Center and Faculty of Engineering, Kansai University, Suita-shi 564-8680, Japan
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Omura Yasuhisa
High-Technology Research Center and Faculty of Engineering, Kansai University, Suita-shi 564-8680, Japan
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