Quantum Mechanical Influence on Flat-Band Capacitance in Metal-Oxide-Semiconductor Structures with a Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation
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概要
- 論文の詳細を見る
In this paper, we describe theoretically how the quantum-mechanical carrier distribution in the flat-band condition influences the flat-band capacitance. It is numerically demonstrated that the semiclassical method overestimates the flat-band capacitance when the quantum-mechanical effect is significant. It is also shown that the quantum-mechanical flat-band capacitance at the gate poly-Si/SiO2 interface significantly influences the total flat-band capacitance and oxide charge evaluation.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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Nakatsuji Hiroshi
High-technology Research Center And Department Of Electronics Faculty Of Engineering Kansai Universi
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Omura Yasuhisa
High-technology Research Center
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SHIMIZU Akira
High-Technology Research Center and Department of Electronics, Faculty of Engineering, Kansai Univer
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Nakatsuji Hiroshi
High-Technology Research Center and Department of Electronics, Faculty of Engineering, Kansai University, 3-3-35, Yamate-cho, Suita, Osaka 564, Japan
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Omura Yasuhisa
High-Technology Research Center and Department of Electronics, Faculty of Engineering, Kansai University, 3-3-35, Yamate-cho, Suita, Osaka 564, Japan
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Shimizu Akira
High-Technology Research Center and Department of Electronics, Faculty of Engineering, Kansai University, 3-3-35, Yamate-cho, Suita, Osaka 564, Japan
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