Analysis of Thin Oxide Growth Mechanisms in Partial-Pressure Rapid-Thermal Oxidation of Silicon
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概要
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In this paper we analyze the growth mechanism of extremely thin silicon-oxide layers, formed by rapid thermal oxidation under various oxygen partial pressures, on the basis of the Deal-Grove model and the silicon-fragment model.It is determined that the silicon-fragment model gives an acceptable interpretation of the experimental results concerning the linear rate constant.
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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Omura Yasuhisa
High-technology Research Center
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KOTANI Yasumi
High-Technology Research Center and Faculty of Engineering, Kansai University
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Kotani Yasumi
High-technology Research Center And Faculty Of Engineering Kansai University
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