Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal–Oxide–Semiconductor Field-Effect Transistor and Performance Perspective
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概要
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In this paper, we describe the operation characteristics of a silicon-on-insulator (SOI) tunneling-barrier-junction (TBJ) metal–oxide–semiconductor field-effect transistor (MOSFET) and simulation methods with the aid of the commercial two-dimensional (2-D) device simulator. No scattering (ballistic transport) is assumed in the electron conduction. It is shown that the device exhibits current-voltage characteristics similar to those of the conventional MOSFET. The subthreshold swing and off-leakage current of the device are much smaller than those of modern MOSFETs; short-channel effects are sufficiently suppressed. However, the drive current of TBJ MOSFET is smaller than that of the conventional MOSFET. In order to increase the drive current, the optimization method for the device structure of TBJ MOSFET is discussed in detail.
- 2003-03-15
著者
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Kawamura Akira
High-technology Research Center And Faculty Of Engineering Kansai University
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Komiya Kenji
High-technology Research Center
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Omura Yasuhisa
High-technology Research Center
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Nakajima Hidehiko
High-technology Research Center And Faculty Of Engineering Kansai University
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Komiya Kenji
High-Technology Research Center and Faculty of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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Nakajima Hidehiko
High-Technology Research Center and Faculty of Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
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