Analysis of Interface Microstructure Evolution in Separation by IMplanted OXygen(SIMOX)Wafers
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概要
- 論文の詳細を見る
We have examined the evolution of interface microstructures in Separation by IMplaned OXygen(SIMOX)wafers during annealing and have proposed a model that can reasonably explain the kinetics of interface evolution. There are two dominant mechanisms in the evolution of a square microstructure : coalescence in the early stage of annealing and diffusion after a sufficient period of annealing. The diffusion of oxygen is the driving force in the evolution of interface flatness.
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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Omura Yasuhisa
High-technology Research Center And Faculty Of Engineering Kansai University
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Omura Yasuhisa
High-technology Research Center Kansai University
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Ishiyama Toshihiko
Ntt Telecommunications Energy Laboratories
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Omura Yasuhisa
High-technology Research Center
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