Semi-classical consideration of velocity overshoot effect on transport noise in short-channel MOSFETs

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This paper examines the characteristics of transport noise created by carrier-density fluctuation in MOSFETs with various channel lengths down to 0.1μm using a semi-classical theoretical scheme. The carrier-density fluctuation is derived from a partial differential equation on the basis of charge-density conservation. The theoretical expression for the spectral density of carrier-density fluctuation power is applied to the analysis of transport noise in a high-frequency range. At first, we discuss how the characteristics of fluctuation power are influenced by channel length. As channel length is reduced, the high frequency component of fluctuation power is enhanced, and interference between the forward and backward propagating carrier-density fluctuation power components becomes significant. Next, we discuss the spectral density of drain current noise for various channel lengths. As channel length is reduced, the spectral density increases through the increase in carrier velocity. At short channel lengths, such as 0.1μm, the velocity overshoot effect becomes significant. We discuss the influence of the velocity overshoot effect on drain current noise spectral density for the channel length of 0.1μm. When the velocity overshoot effect is taken into account, the drain current noise spectral density is enhanced, and the high frequency component of drain current noise spectral density is also enhanced. It is predicted that the transport noise stemming from carrier-density fluctuation would be significant in 0.1-μm channel MOSFETs.
関西大学の論文
2006-03-21

Semi-classical consideration of velocity overshoot effect on transport noise in short-channel MOSFETs

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