Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
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Omura Yasuhisa
High-technology Research Center And Faculty Of Engineering Kansai University
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Nakajima Hidehiko
High-Technology Research Center and Faculty of Engineering, Kansai University
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Kawamura Akira
High-Technology Research Center and Faculty of Engineering, Kansai University
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Komiya Kenji
High-Technology Research Center and Faculty of Engineering, Kansai University
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Kawamura Akira
High-technology Research Center And Faculty Of Engineering Kansai University
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Komiya Kenji
High-technology Research Center
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Omura Yasuhisa
High-technology Research Center
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Nakajima Hidehiko
High-technology Research Center And Faculty Of Engineering Kansai University
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