Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
スポンサーリンク
概要
著者
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Omura Yasuhisa
High-technology Research Center And Faculty Of Engineering Kansai University
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Nakajima Hidehiko
High-Technology Research Center and Faculty of Engineering, Kansai University
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Kawamura Akira
High-Technology Research Center and Faculty of Engineering, Kansai University
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Komiya Kenji
High-Technology Research Center and Faculty of Engineering, Kansai University
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Kawamura Akira
High-technology Research Center And Faculty Of Engineering Kansai University
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Komiya Kenji
High-technology Research Center And Faculty Of Engineering Kansai University
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Komiya Kenji
High-technology Research Center
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Omura Yasuhisa
High-technology Research Center
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Nakajima Hidehiko
High-technology Research Center And Faculty Of Engineering Kansai University
関連論文
- Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
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