Two-Dimensional Quantization Effect on Indirect Tunneling in an Insulated-Gate Lateral pn-Junction Structure with a Thin Silicon Layer
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概要
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In this paper, the multi-negative conductance property detected at low temperatures in a silicon-on-insulator insulated-gate pn-junction device with a 10-nm-thick silicon layer is described.Important aspects of lateral low-dimensional tunneling process are examined by a theoretical formulation.A comparison of the characteristics of devices with a 10-nm-thick or a 90-nm-thick silicon layer indicates that the strong two-dimensional confinement effect plays an important role in multi-negative conductance.The theory predicts that a "resonance effect"between two subband levels results in the multi-negative conductance in the device with the 10-nm-thick silicon layer.
- 社団法人応用物理学会の論文
- 2000-04-15
著者
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Omura Yasuhisa
High-technology Research Center And Department Of Electronics Faculty Of Engineering Kansai Universi
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Omura Yasuhisa
High-technology Research Center
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