Nakakubo Atsushi | Electronics, High-Technology Research Center and Faculty of Engineering, Kansai University
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概要
- NAKAKUBO Atsushiの詳細を見る
- 同名の論文著者
- Electronics, High-Technology Research Center and Faculty of Engineering, Kansai Universityの論文著者
関連著者
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Omura Y
Electronics High-technology Research Center And Faculty Of Engineering Kansai University
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Omura Y
Ntt Lsi Laboratories
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Omura Yasuhisa
Electronics Department Kansai University
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Nakakubo Atsushi
Electronics, High-Technology Research Center and Faculty of Engineering, Kansai University
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Nakakubo A
Electronics High-technology Research Center And Faculty Of Engineering Kansai University
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中辻 博
京都大学大学院工学研究科
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Nakatsuji Hiroshi
Electronics High-technology Research Center And Faculty Of Engineering Kansai University
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Nakatsuji Hiroshi
Department Of Synthetic Chemistry And Biological Chemistry Faculty Of Engineering Kyoto University
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YANAGI Shin-ichiro
High-Technology Research Center and Faculty of Engineering, Kansai University
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Yanagi S
Kansai Univ.
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Omura Yasuhisa
High-technology Research Center And Faculty Of Engineering Kansai University
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Omura Yasuhisa
High-technology Research Center
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NAKAKUBO Atsushi
High-Technology Research Center and Faculty of Engineering, Kansai University
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Yanagi Shin-ichiro
High-technology Research Center
著作論文
- Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs
- Quantization Effect in Temperature Dependence of Threshold Voltage of Extremely-Thin SOI MOSFETs
- Proposal of a Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) MOSFET for Deep sub-0.1-μm Channel Regime
- Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime