Omura Yasuhisa | NTT LSI Laboratories

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著作論文

Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates
Abnormal Threshold Voltage Dependence on Gate Length in Ultrathin-Film n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (nMOSFET's) Using Separation by Implanted Oxygen (SIMOX) Technology
A 1GHz/0.9mW CMOS/SIMOX Divide-by 128/129 Dual-Modulus Prescaler Using a Divide-by 2/3 Synchronous Counter
An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4μm Gate Ultrathin-Film SIMOX Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Two-Dimensionally Confined Carrier Injection Phenomena in Sub-10-nm-Thick SOI Insulated-Gate pn-Junction Devices
Enhancement and Suppression of Band-to-Band Tunneling Current in Ultra-Thin nMOSFETs/SIMOX : Influence of Superficial Si Layer Thickness and It's Future Prospect
Dependence of CMOS/SIMOX Inverter Delay Time on Gate Overlap Capacitance
A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen

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