Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-28

著者

• NAGASE Masao

  NTT LSI Laboratories

• Omura Yasuhisa

  NTT LSI Laboratories

関連論文

• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates
• Examination of Correlation of Surface Morphologies of Top-Silicon and Buried Oxide Layers in High-Temperature-Annealed Separation by IMplanted OXygen Wafers
• Abnormal Threshold Voltage Dependence on Gate Length in Ultrathin-Film n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (nMOSFET's) Using Separation by Implanted Oxygen (SIMOX) Technology
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
• An Electron Beam Nanolithography System and its Application to Si Nanofabrication
• Metrology of Atomic Force Microscopy for Si Nano-Structures
• A 1GHz/0.9mW CMOS/SIMOX Divide-by 128/129 Dual-Modulus Prescaler Using a Divide-by 2/3 Synchronous Counter
• An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4μm Gate Ultrathin-Film SIMOX Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
• Microstructure of Si Surface Epitaxially Grown in SiH_4-H_2 System
• Two-Dimensionally Confined Carrier Injection Phenomena in Sub-10-nm-Thick SOI Insulated-Gate pn-Junction Devices
• Enhancement and Suppression of Band-to-Band Tunneling Current in Ultra-Thin nMOSFETs/SIMOX : Influence of Superficial Si Layer Thickness and It's Future Prospect
• Dependence of CMOS/SIMOX Inverter Delay Time on Gate Overlap Capacitance
• A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen

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