Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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NAGASE Masao
NTT LSI Laboratories
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KUNII Yasuo
NTT LSI Laboratories
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Nagase Masao
Ntt Lsi Labs. Nippon Telegraph And Telephone Co.
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Kunii Yasuo
Ntt Lsi Labs. Nippon Telegraph And Telephone Co.
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- Evolution of Extended Defects in High Temperature (T>1150℃) Oxidized SIMOX
- Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
- Microstructure of Si Surface Epitaxially Grown in SiH_4-H_2 System
- Measurememt of Ge/Si Ratio of SiGe-Layer on Si Substrate Using Total-Reflection X-Ray Fluorescence
- Si Surface Cleaning by Si_2H_6-H_2 Gas Etching and Its Effects on Solid-Phase Epitaxy