Evolution of Extended Defects in High Temperature (T>1150℃) Oxidized SIMOX

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• KUNII Yasuo

  NTT LSI Laboratories

• Kunii Yasuo

  Ntt Lsi. Labs. Nippon Telegraph And Telephone Co.

• GILES Luis

  NTT LSI. Labs., Nippon Telegraph and Telephone Co.

• Giles Luis

  Ntt Lsi. Labs. Nippon Telegraph And Telephone Co.

関連論文

• {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
• Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH_4-B_2H_6 Molecular Beam Epitaxy
• Evolution of Extended Defects in High Temperature (T>1150℃) Oxidized SIMOX
• Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
• Microstructure of Si Surface Epitaxially Grown in SiH_4-H_2 System
• Measurememt of Ge/Si Ratio of SiGe-Layer on Si Substrate Using Total-Reflection X-Ray Fluorescence
• Si Surface Cleaning by Si_2H_6-H_2 Gas Etching and Its Effects on Solid-Phase Epitaxy

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