Measurememt of Ge/Si Ratio of SiGe-Layer on Si Substrate Using Total-Reflection X-Ray Fluorescence

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概要

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• The analysis of the Ge/Si ratio and the depth profile in a SiGe/Si sample has been performed using the recently developed total-reflection X-ray fluorescence (TXRF) apparatus. The TXRF measurement procedure is nondestructive, highly sensitive, requires no preparation, uses cassette-to-cassette operation, and provides depth information. It is used here to measure the Ge/Si ratio of SiGe molecular beam epitaxy (MBE) layers. The relationship between sample structure and the dependence of Ge-Lα and Si-Kα peak intensities on the glancing angle is studied. The Ge-Lα/Si-Kα peak intensity ratio is found to correspond to the Ge/Si atomic ratio as measured by Auger electron spectroscopy (AES).

• 社団法人応用物理学会の論文
• 1993-03-15

著者

• KUNII Yasuo

  NTT LSI Laboratories

• Kunii Yasuo

  Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
• Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH_4-B_2H_6 Molecular Beam Epitaxy
• Evolution of Extended Defects in High Temperature (T>1150℃) Oxidized SIMOX
• Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
• Microstructure of Si Surface Epitaxially Grown in SiH_4-H_2 System
• Measurememt of Ge/Si Ratio of SiGe-Layer on Si Substrate Using Total-Reflection X-Ray Fluorescence
• Si Surface Cleaning by Si_2H_6-H_2 Gas Etching and Its Effects on Solid-Phase Epitaxy

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