Si Surface Cleaning by Si_2H_6-H_2 Gas Etching and Its Effects on Solid-Phase Epitaxy

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概要

• 論文の詳細を見る

• Si surface cleaning with Si_2H_6-H_2 was studied for lateral solid-phase epitaxy (L-SPE) of CVD a-Si films. The cleaning was performed at 850℃, which is considerably lower than the previously-reported H_2-cleaning temperature (1100℃). This is because etching of native oxide is enhanced by a reaction between oxide and Si-atoms dissociated from Si_2H_6. The effects of Si_2H_6-cleaning on L-SPE were studied using a Si (100) wafer with SiO_2 stripes. After Si_2H_6-cleaning or H_2-cleaning at 850℃, CVD a-Si films are deposited on the wafers, then crystallized by annealing (575℃). An H_2-cleaned sample showed imperfect L-SPE because of a residual native-oxide layer at the a-Si / substrate interface. In the Si_2H_6-cleaned sample, the native-oxide layer was removed, and L-SPE growth was observed uniformly in the wafer. Si_2H_6-cleaning at 850℃ is applicable for substrates with abrupt impurity distribution.

• 社団法人応用物理学会の論文
• 1987-11-20

著者

• KUNII Yasuo

  NTT LSI Laboratories

• SAKAKIBARA Yutaka

  NTT LSI Laboratories

• Sakakibara Yutaka

  Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
• Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH_4-B_2H_6 Molecular Beam Epitaxy
• Evolution of Extended Defects in High Temperature (T>1150℃) Oxidized SIMOX
• Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
• Microstructure of Si Surface Epitaxially Grown in SiH_4-H_2 System
• Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO_2(3.5nm)-Si Interface by the Conductance Technique
• Measurememt of Ge/Si Ratio of SiGe-Layer on Si Substrate Using Total-Reflection X-Ray Fluorescence
• Si Surface Cleaning by Si_2H_6-H_2 Gas Etching and Its Effects on Solid-Phase Epitaxy

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