Two-Dimensionally Confined Carrier Injection Phenomena in Sub-10-nm-Thick SOI Insulated-Gate pn-Junction Devices
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- 1995-08-21
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関連論文
- Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates
- Abnormal Threshold Voltage Dependence on Gate Length in Ultrathin-Film n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (nMOSFET's) Using Separation by Implanted Oxygen (SIMOX) Technology
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- Two-Dimensionally Confined Carrier Injection Phenomena in Sub-10-nm-Thick SOI Insulated-Gate pn-Junction Devices
- Enhancement and Suppression of Band-to-Band Tunneling Current in Ultra-Thin nMOSFETs/SIMOX : Influence of Superficial Si Layer Thickness and It's Future Prospect
- Dependence of CMOS/SIMOX Inverter Delay Time on Gate Overlap Capacitance
- A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen