Influence of Pattern Displacement Error Caused by Film Deposition on Overlay Accuracy in LSI Fabrication
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概要
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Overlay accuracy is influenced by wafer distortion that occurs during the LSI fabrication process. The effect of film deposition can be especially harmful when fabricating highly miniaturized devices. For this reason, we have investigated pattern displacement error caused by film deposition. The error was measured using a laser interferometric measuring system, and it was collated with the calculation results by the theory on the strength of materials. It was clarified that pattern displacement error arose even if bends in the wafer were corrected by vacuum chucking. The displacement error is proportional to the product of film stress and thikness. Accordingly, the film stress should be kept as low as possible. However, it is quite difficult to achieve large reductions in film stress for all materials in the LSI process. Therefore, countermeasures such as magnification control will be needed hereafter.
- 社団法人応用物理学会の論文
- 1996-04-15
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