Effects of Fresnel Diffraction on Resolution and Linewidth Control in Synchrotron Radiation Lithography

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To investigate the influence of Fresnel diffraction on resolution and linewidth control in synchrotron radiation (SR) lithography, a detailed analysis is performed that takes X-ray phase shift in the absorber into account. The phase shift for 0.65-μm-thick Ta absorber is estimated to be -180°. It becomes clear that the phase shift plays a important role in limiting pattern resolution and Iinewidth control, especially for replicating fine (<0.3 μm) patterns. The conditions for replicating 0.2-μm lines-and-spaces resist patterns under practical conditions-i.e., with a mask contrast of 7 and a proximity gap of around 30 μm-are described. Designing a Ta absorber that is slightly narrower (<0.05 μm) than 0.2 μm is a great advantage for replicating 0.2-μm patterns because the dose-margin for replicating the patterns faithfully is improved.
社団法人応用物理学会の論文
1992-03-15