Miyake Masayasu | Ntt System Electronics Laboratories
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概要
関連著者
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Miyake Masayasu
Ntt System Electronics Laboratories
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小林 孝嘉
東京大学理学系研究科
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Ishii Shozo
Tokyo Institute Of Technology
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DEGUCHI Kimiyoshi
NTT System Electronics Laboratories
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Ishii Shozo
Department Of Electrical And Electronic Engineering Tokyo Instutute Of Technology
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Yasuoka K
Tokyo Institute Of Technology
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KOBAYASHI Toshio
NTT System Electronics Laboratories
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SAKAKIBARA Yutaka
NTT System Electronics Laboratories
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TAKAHASHI Mitsutoshi
NTT System Electronics Laboratories
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Ishii S
Univ. Tsukuba Tsukuba Jpn
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Deguchi K
Department Of Electronics And Information Systems Osaka University
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Sakakibara Y
National Institute Of Advanced Industrial Science And Technology (aist)
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Yasuoka Kiyoshi
Institute Of Physics University Of Tsukuba:(present Address)fermi National Accelerator Laboratory
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Takahashi Minoru
Ceramic Engineering Research Laboratory Nagoya Institute Of Technology
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ISHII Shozo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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YASUOKA Koichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Ishii Shozo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yasuoka Koichi
Tokyo Inst. Of Tech.
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Yasuoka Koichi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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MIYAKE Masatoshi
Tokyo Institute of Technology
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UEHARA Seturi
Tokyo Institute of Technology
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MIYAKE Masatoshi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Tech
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IBUKA Sinji
Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Tech
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Ibuka Sinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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Ishii Shozo
Tokyo Inst. Of Tech.
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Ishii Shozo
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Technology
著作論文
- Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization
- Deep-Submicron Single-Gate CMOS Technology Using Channel Preamorphization
- Mechanism of Electron Emission from the Ferroelectric Ceramic Cathode
- Effects of Polarization Reversal and Surface Conditions on the Ferroelectric Electron Emission