A Beam Drift Reduction Device for the X-Ray Mask E-Beam Writer, EB-X2
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
-
Kato Junichi
Ntt Lsi Laboratories
-
Kato Junichi
Ntt System Electronics Laboratories
-
SAITO Kenichi
NTT System Electronics Laboratories
-
MORITA Hirofumi
NTT System Electronics Laboratories
-
SHIMAZU Nobuo
NTT System Electronics Laboratories
-
MORITA Hirofumi
NTT LSI Laboratories
-
SHIMAZU Nobuo
NTT LSI Laboratories
-
Morita H
Lcd Division Toshiba Corporation
-
Kato J
Ntt Telecommunications Energy Lab. Kanagawa Jpn
-
SAITO Keisuke
Application Laboratory
-
Kato J
Ntt Lsi Laboratories
-
Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
-
Saito K
Institute Of Industrial Science University Of Tokyo
-
Shimazu N
Ntt Lsi Lob. Kanagawa Jpn
-
MORITA Hirofumi
NTT Telecommunications Energy Laboratories
-
Saito Kunio
Ntt Microsystem Integration Laboratories
-
Saito K
Akita Univ. Akita Jpn
-
Saito Keisuke
Application Laboratory Bruker Axs
関連論文
- Supercell structure on continuous growth of Bi2Sr2Ca1Cu2Ox film
- Effect of strain on supercell structure of bismuth cuprate superconducting film (Special issue: Nano electronic materials)
- A Beam Drift Reduction Device for the X-Ray Mask E-Beam Writer, EB-X2
- Basic Characteristics of Beam Position Drift and Field Stitching Error Caused by Electron Beam Column Charging
- Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication
- Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1x X-Ray Masks
- Impact of 90ﾟ-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
- Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
- Unique Shapes of Micro-Pits Formed in an Al-Pd-Mn Icosahedral Quasicrystal by Anodic Etching
- Determination of Quasi-Crystallographic Orientations of Al-Pd-Mn Icosahedral Phase by Means of Light Figure Method
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
- Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- Preparation of BiSrCaCuO Multilayers by Use of Slower Q-Switched 266nm YAG Laser : Superconductors
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Design and Lasing Operation of Micro-Arc-Ring Lasers
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
- Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
- Effect of La substitution on Electrical Properties of Highly Oriented Bi_4Ti_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition
- Large lattice misfit on epitaxial thin film: coincidence site lattice expanded on polar coordinate system (Special issue: Dry process)
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O_3 Film by Metalorganic Chemical Vapor Deposition
- Fabrication of High Performance Polymeric Microfluidic Device by a Simple Imprinting Method using a Photosensitive Sheet
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Epitaxial Growth of (100)-Oriented β-FeSi_2 Thin Films on Insulating Substrates
- Photoluminescence Properties from β-FeSi_2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Good Ferroelectricity of Pb (Zr, Ti) O_3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395℃
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Perovskite Single-Phase Growth of Epitaxial Pb(Zn_Nb_)O_3 Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition
- Quantitative Effects of Preferred Orientation and Impurity Phases of Ferroelectric Properties of SrBi_2(Ta_Nb_x)_2O_9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Crystal Structure Refinement of (Pb_Ca_x)ZrO_3 by the Rietvelt Method
- Dielectric Properties of Pb-Based Perovskite Substituted by Ti for B-site at Microwave Frequencies
- Low-Fire Bismuth-Based Dielectric Ceramics for Microwave Use
- Dielectric Properties of (PbCa)(MeNb)O_3 at Microwave Frequencies
- Dielectric Properties of Lead Alkaline-Earth Zirconate at Microwave Frequencies : Dielectric Properties
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors
- Current-Voltage Characteristics and Conductivity of Metal-Insulator-Metal(Ti/TaO_x/Ta) Type Thin-Film Diode
- Current-Voltage Characteristics of Thin-Film Diode Elements and Application of Poole-Frenkel Equation
- Influence of Current-Voltage Characteristics on Image-Sticking of Thin-Film-Diode Liquid-Crystal Displays
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Performance of X-Ray Stepper for Next-Generation Lithography
- Continuous Wavelength Tuning of Inter-Valence-Band Laser Oscillation in p-Type Germanium Over Range of 80-120 μm
- Photovoltaic Cells of Merocyanine Dye Polymer Thin Films Prepared by Plasma Polymerization Method : Chemistry : incl. physical process
- Photoconduction in Polyvinyl Carbazole Thin Films Polymerized by Plasma-CVD
- A 100 kV Electron Gun for the X-Ray Mask Writer, EB-X2
- An Approach to a High-Throughput E-Beam Writer with a Single-Gun Multiple-Path System
- A 100-kV, 100-A/cm^2 Electron Optical System for the EB-X3 X-Ray Mask Writer
- Low Temperature Direct Crystallization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
- Application of Mark Detection Using the Vibration Method to an Electron Beam Exposure System
- Role of Non-180° Domain Switching in Electrical Properties of Pb(Zr_, Ti)O_3 Thin Films
- Method of Distinguishing SrBi_2Ta_2O_9 Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
- Metal-Oxide-Semiconductor-Diode Characteristics with SiO_2 Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- MOCVD Preparation of Epitaxial SBT Films and Their Properties
- Proximity Effect Correction for X-Ray Mask Fabrication
- Fabrication and Characterization of Nd-Substituted Bi4Ti3O12 Thin Films with $a$- and $b$-Axis Orientations by High-Temperature Sputtering
- Synthesis of Mica Thin Film by Pulsed Laser Deposition
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition
- Effect of La substitution on Electrical Properties of Highly Oriented Bi4Ti3O12 Films Prepared by Metalorganic Chemical Vapor Deposition
- Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
- 金ナノ粒子を用いた三次元櫛形電極の作製とバイオセンシングヘの応用
- In-Plane Lattice Strain Evaluation in Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- In situ Observation of the Fatigue-Free Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction
- Quantitative Effects of Preferred Orientation and Impurity Phases on Ferroelectric Properties of SrBi2(Ta1-xNbx)2O9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Structural Characterization of BiFeO3 Thin Films by Reciprocal Space Mapping
- Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer
- Crystal Structure and Electrical Properties of {100}-Oriented Epitaxial BiCoO3–BiFeO3 Films Grown by Metalorganic Chemical Vapor Deposition
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Improved Counter-Electrode Used in Two-Dimensional Electrochromic Writing Board