Metal-Oxide-Semiconductor-Diode Characteristics with SiO_2 Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
-
Ono Toshiro
Ntt Microsystem Integration Laboratories
-
Saito Kunio
Ntt Microsystem Integration Laboratories
-
Jin Y
Ntt Microsystem Integration Laboratories
-
Shimada Masaru
Ntt Microsystem Integration Laboratories
-
JIN Yoshito
NTT Microsystem Integration Laboratories
関連論文
- A Beam Drift Reduction Device for the X-Ray Mask E-Beam Writer, EB-X2
- Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication
- Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1x X-Ray Masks
- Impact of 90゚-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
- Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
- Unique Shapes of Micro-Pits Formed in an Al-Pd-Mn Icosahedral Quasicrystal by Anodic Etching
- Determination of Quasi-Crystallographic Orientations of Al-Pd-Mn Icosahedral Phase by Means of Light Figure Method
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- Preparation of BiSrCaCuO Multilayers by Use of Slower Q-Switched 266nm YAG Laser : Superconductors
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched ^Si Layer : Semiconductors
- Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Fabrication of High Performance Polymeric Microfluidic Device by a Simple Imprinting Method using a Photosensitive Sheet
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Neutral Stream Extraction from Electron Cyclotron Resonance Plasma by Using Parallel Magnetic Field
- Generation of Electron Cyclotron Resonance Neutral Stream and Its Application to Si Etching
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- A 100 kV Electron Gun for the X-Ray Mask Writer, EB-X2
- An Approach to a High-Throughput E-Beam Writer with a Single-Gun Multiple-Path System
- A 100-kV, 100-A/cm^2 Electron Optical System for the EB-X3 X-Ray Mask Writer
- Reversible Resistive Switching in Bi_4Ti_3O_ Thin Films Deposited by Electron Cyclotron Resonance Sputtering
- Low Temperature Direct Crystallization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
- Role of Non-180° Domain Switching in Electrical Properties of Pb(Zr_, Ti)O_3 Thin Films
- Method of Distinguishing SrBi_2Ta_2O_9 Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
- Metal-Oxide-Semiconductor-Diode Characteristics with SiO_2 Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
- Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
- Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- Non-volatile Al_2O_3 memory using an Al-rich structure as a charge storage layer
- Synthesis of Mica Thin Film by Pulsed Laser Deposition
- Birefringence and Optical Waveguiding Losses in Preferentially $c$-Axis Oriented LiNbO3 Thin Films on SiO2 Produced by Electron Cyclotron Resonance Plasma Sputtering
- Selective Removal of Dry-Etching Residue Derived from Polymer Sacrificial Layer for Microelectromechanical-System Device Fabrication
- Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
- Synchronized Multiple-Array Vibrational Device for Microelectromechanical System Electrostatic Energy Harvester
- Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Characterization of Metal Insulator Metal Electrical Properties of Electron Cyclotron Resonance Plasma Deposited Ta2O5
- Reversible Resistive Switching in Bi4Ti3O12 Thin Films Deposited by Electron Cyclotron Resonance Sputtering