Low Temperature Direct Crystallization of SrBi_2(Ta_<1-x>Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-01
著者
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NUKAGA Norimasa
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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MITSUYA MASATOSHI
Department of Radiology, Tohoku University School of Medicine
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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Funakubo H
Tokyo Inst. Technol. Yokohama Jpn
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials Interdisciplinary Graduated School Of Science And
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Osada M
National Inst. For Materials Sci. Tsukuba Jpn
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SAITO Keisuke
Application Laboratory
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Osada M
Advanced Materials Laboratory National Institute For Materials Science
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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舟窪 浩
東工大院総合理工学研究科
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Saito Kunio
Ntt Microsystem Integration Laboratories
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OSADA Minoru
The Institute of Physical and Chemical Research (RIKEN)
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Saito K
Akita Univ. Akita Jpn
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Mitsuya Masatoshi
Department Of Innovative And Engineered Materials
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Mitsuya Masatoshi
Kanagawa Industrial Technology Research Institute
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Saito Keisuke
Application Laboratory Bruker Axs
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Nukaga N
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Tokyo Institute
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Nukaga Norimasa
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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