Crystal Orientation Dependence on Electrical Properties of Pb(Zr, Ti)O_3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-30
著者
-
FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
-
Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
-
YOKOYAMA Shintaro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
-
HONDA Yoshihisa
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
-
ASANO Gouji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
-
OKAMOTO Shoji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
-
Okamoto Shoji
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
-
Yokoyama S
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
関連論文
- Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3–BiFeO3 solid solution system
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- サイトエンジニアリングコンセプトを用いたBi_4Ti_3O_12基薄膜特性の設計
- a,b軸配向エピタキシャルBi_4Ti_3O_12基薄膜の合成と特性評価
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics
- エピタキシャルSrBi_2Ta_2O_9薄膜の界面構造
- X線逆格子イメージング法を用いた表界面ナノ構造評価
- Impact of 90ﾟ-Domain Wall Motion in Pb(Zr_Ti_)O_3 Film on the Ferroelectricity Induced by an Applied Electric Field
- Thick Epitaxial Pb(Zr_,Ti_)O_3 Films Grown on (100)CaF_2 Substrates with Polar-Axis-Orientation
- 多次元検出器と高分解能X線回折装置を用いた薄膜材料解析
- X線回折逆格子空間マッピング法を用いた強誘電体薄膜中のドメイン構造の観察 (特集 強誘電体におけるドメインエンジニアリングの最新動向)
- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O_3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- 高密度強誘電体メモリ用のMOCVD合成Pb(Zr,Ti)O_3の高再現性作製のための(111)配向したSrRuO_3/Pt下部電極(非揮発性メモリ及び関連プロセス一般)
- ビスマス層状誘電体のナノレイヤー積層方向に見られる新規誘電特性
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Structural Modulation in Oxygen Deficient Epitaxial Bi_2Sr_2Ca_1Cu_2O_X Observed by X-ray Reciprocal Space Mapping
- Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
- Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- Effect of La substitution on Electrical Properties of Highly Oriented Bi_4Ti_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O_3 Film by Metalorganic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Epitaxial Growth of (100)-Oriented β-FeSi_2 Thin Films on Insulating Substrates
- Photoluminescence Properties from β-FeSi_2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Good Ferroelectricity of Pb (Zr, Ti) O_3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395℃
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Perovskite Single-Phase Growth of Epitaxial Pb(Zn_Nb_)O_3 Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition
- Quantitative Effects of Preferred Orientation and Impurity Phases of Ferroelectric Properties of SrBi_2(Ta_Nb_x)_2O_9 Thin Films Measured by X-Ray Diffraction Reciprocal Space Mapping
- Y_2O_3-Stabilized ZrO_2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Film Thickness Dependence of Dielectric Property and Crystal Structureof PbTiO_3 Film Prepared on Pt/SiO_2/Si Substrate by Metal Organic Chemical Vapor Deposition
- Highly-Reproducible Preparation of Pb(Zr,Ti)O_3 Films at Low Deposition Temperature by Metal Organic Chemical Vapor Deposition
- Dependence of Ferroelectric Properties on Thickness of BiFeO_3 Thin Films Fabricated by Chemical Solution Deposition
- Ion Modification for Improvement of Insulating and Ferroelectric Properties of BiFeO_3 Thin Films Fabricated by Chemical Solution Deposition
- Structural and Electrical Properties of Polycrystalline Bi_Nd_xTi_3O_ Ferroelectric Thin Films with in-Plane c-Axis Orientations
- Ferroelectric Properties of Dysprosium-Substituted Lead Zirconate Titanate Thin Films Fabricated by Chemical Solution Deposition
- Charge-Compensative Ion Substitution of La^-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
- Spontaneous Polarization of Neodymium-Substituted Bi_4Ti_3O_ Estimated from Epitaxially Grown Thin Films with in-Plane c-Axis Orientations
- Electrical Properties of (Ca,Sr)Bi_4Ti_40_ Thin Films Fabricated Using a Chemical Solution Deposition Method
- Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
- Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
- c軸配向ビスマス層状化合物膜の誘電特性 (特集 エレクトロニクセラミックス薄膜)
- 強誘電体薄膜におけるサイトエンジニアリングコンセプト
- 強誘電体薄膜材料における非鉛化実現の可能性
- 新材料開発 サイトエンジニアリングコンセプトに基づくBi4Ti3O12基強誘電体の設計
- Combinatorial preparation process of Pb(Zr_Ti_x)O_3 thin films by chemical solution deposition method
- Preparation of Pb(Zr_x, Ti_)O_3 Thin Films by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Improvement of Property of Pb(Zr_xTi_)O_3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
- Crystal Structure and Ferroelectric Property of Tungsten-substituted Bi_4Ti_3O_ Thin Films Prepared by Metal-Organic Chemical Vapor Deposition
- Raman Spectroscopic Characterization of Tetragonal PbZr_xTi_O_3 Thin Films : A Rapid Evaluation Method for c-Domain Volume
- Epitaxial Growth Map for Bi_4Ti_3O_ Films : a Determining Factor for Crystal Orientation
- Crystal Orientation Dependence on Electrical Properties of Pb(Zr, Ti)O_3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Cation Distribution and Structural Instability in Bi_La_xTi_3O_
- Raman Spectroscopic Fingerprint of Ferroelectric SrBi_2Ta_2O_9 Thin Films: A Rapid Distinction Method for Fluorite and Pyrochlore Phases : Electrical Properties of Condensed Matter
- Preparation of Orientation-Controlled Polycrystalline Pb(Zr, Ti)O_3 Thick Films on (100)Si Substrates by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi_2VO_ Thin Films : Electrical Properties of Condonsed Matter
- Local Epitaxial Growth of (103) One-Axis-Oriented SrBi_2Ta_2O_9 Thin Films Prepared at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Interface and Domain Structures of (116)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (110) SrTiO_3 Single Crystal
- Interface and Defect Structures of (001)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (001) SrTiO_3 Single Crystal
- Low Temperature Deposition of Pb(Zr,Ti)O_3 Film by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Metalorganic Chemical Vapor Deposition of Conductive CaRuO_3 Thin Films
- Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors
- Composition Control of Pb(Zr_xTi_)O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Preparation of SrBi_2Ta_2O_9 Thin Films Consisting of Uniform Grains at Low Temperature by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Orientation Control of Metalorganic Chemical Vapor Deposition-Bi_4Ti_3O_ Thin Film by Sequential Source Gas Supply Method
- Growth of Epitaxial SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition
- Growth Behavior of c-Axis-Oriented Epitaxial SrBi_2Ta_2O_9 Films on SrTiO_3 Substrates with Atomic Scale Step Structure
- Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure(The 62th CerSJ Awards for Academic Achievement in Ceramic Science and Technology)
- Low Temperature Direct Crystallization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition and Their Properties
- Role of Non-180° Domain Switching in Electrical Properties of Pb(Zr_, Ti)O_3 Thin Films
- Method of Distinguishing SrBi_2Ta_2O_9 Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
- Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Bi_M_xTiTa0_9 (M=La or Nd) Ceramics with High Mechanical Quality Factor Q_m
- Effect of Deposition Temperature and Composition on the Microstructure and Electrical Property of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Epitaxial SrBi_2Ta_2O_9 Thin Films and Their Crystal Structure
- Preparation of SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- Preparation and Characterization of SrBi_2(Ta_Nb_x)_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles