ASANO Gouji | Department of Innovative and Engineered Materials, Tokyo Institute of Technology

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概要

• Asano Goujiの詳細を見る
• 同名の論文著者
• Department of Innovative and Engineered Materials, Tokyo Institute of Technologyの論文著者

関連著者

• FUNAKUBO Hiroshi

  Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut

• ASANO Gouji

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• OIKAWA Takahiro

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• YOKOYAMA Shintaro

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• HONDA Yoshihisa

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• Yokoyama S

  Department Of Innovative And Engineered Materials Tokyo Institute Of Technology

• Morioka Hitoshi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• Funakubo H

  Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.

• Funakubo Hiroshi

  Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E

• Saito Keisuke

  Application Laboratory Analytical Division Philips Japan Ltd.

• Iijima Takashi

  Smart Structure Research Center National Institute Of Advanced Industrial Science And Technology (ai

• Iijima Takashi

  Materials Engineering Division Tohoku National Industrial Research Institute

• Morioka Hitoshi

  Department Of Innovative And Engineered Materials Tokyo Institute Of Technology

• IIJIMA Takashi

  National Institute of Advanced Industrial Science and Technology

• MATSUDA Hirofumi

  National Institute of Advanced Industrial Science and Technology

• OKAMOTO Shoji

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• SAITO Keisuke

  PANalytical Japan

• Okamoto Shoji

  Department Of Innovative And Engineered Materials Tokyo Institute Of Technology

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著作論文

• Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O_3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
• Good Ferroelectricity of Pb (Zr, Ti) O_3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395℃
• Highly-Reproducible Preparation of Pb(Zr,Ti)O_3 Films at Low Deposition Temperature by Metal Organic Chemical Vapor Deposition
• Crystal Orientation Dependence on Electrical Properties of Pb(Zr, Ti)O_3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition

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