Growth of Epitaxial SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials Graduated School Of Science And Engineering Tokyo
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ISHIKAWA Katsuyuki
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Saiki Atsushi
Research Cooperation Section Tokyo Institute Of Technology
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Ishikawa Katsuyuki
Department Of Innovative And Engineered Materials Graduated School Of Science And Engineering Tokyo
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O_3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
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