Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method
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概要
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Ba(ZrxTi1-x)O3 (BZT) thin films with different Zr contents were deposited on (100) MgO and (100) Pt/(100) MgO substrates by RF-magnetron reactive sputtering using metal targets. The BZT (0 < x < 0.89) thin films had a single perovskite phase with only (001)/(100) orientation. In all cases, the ratio of Ba/Ti was stoichiometric according to X-ray fluorescence spectrometry (WDX) measurement. Atomic force microscopy (AFM) study proved that BZT films possess a dense microstructure without cracks or voids. The grain size was found to decrease with increasing of Zr content. The effect of Zr content on the dielectric constant and leakage current was studied. BZT thin films showed ferroelectric-to-paraelectric properties with increasing Zr content and excellent leakage properties according to measurements of electrical properties. These results indicated that we succeeded in depositing high-quality and low-sputter-damage BZT thin films by reactive sputtering using metal targets.
- 2012-09-25
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Kim Jin
Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar
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Nishida Ken
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
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SHIMA Hiromi
Department of Applied Physics, Faculty of Science, Tokyo University of Science
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TAI Takeshi
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
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Yamamoto Takashi
Department Of Applied Chemistry Faculty Of Engineering Ehime University
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Nishide Masamichi
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Osumi Tsuyoshi
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Mastuoka Masashi
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Nishida Ken
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Tai Takeshi
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Funakubo Hiroshi
Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kim Jin
Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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