Orientation Dependence of Epitaxial and One-Axis-Oriented (Ba0.5Sr0.5)TiO3 Films Prepared by RF Magnetron Sputtering
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概要
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The dependences of electrical properties on (111) and (100) orientations were investigated for (Ba0.5Sr0.5)TiO3 films with in-plane random (one-axis-oriented films) and aligned orientations (epitaxial films) prepared by RF magnetron sputtering. Epitaxial films with (100) and (111) orientations were grown on (100)cSrRuO3$\parallel$(100)SrTiO3 and (111)cSrRuO3$\parallel$(111)SrTiO3 substrates, while one-axis-oriented films were grown on (100)cSrRuO3/(100)cLaNiO3/(111)Pt/TiO2/SiO2/Al2O3 and (111)cSrRuO3/(111)Pt/TiO2/SiO2/Al2O3 substrates, respectively. Films with the (111) orientation had larger relative dielectric constants, $\varepsilon _{\text{r}}$, measured at an oscillation of 20 mV and 100 kHz under an applied dc bias electric field of 0 kV/cm and a larger tunability against the dc bias electric field than (100)-oriented films for both epitaxial and one-axis orientations. These data show the dependences of $\varepsilon _{\text{r}}$ and tunability on orientation were existed, irrespective of the in-plane orientation and the thermal strain caused in the film by the substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-09-15
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Okamoto Shoji
Department Of Dermatology School Of Medicine Chiba University
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Takahashi Kenji
Department Of Applied Biological Chemistry Graduate School Of Agriculture Kinki University
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Koutsaroff Ivoyl
Technology R&D, Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5, Canada
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Cervin-Lawry Andrew
Technology R&D, Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5, Canada
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Ito Sinichi
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-Cho, Midori-Ku, Yokohama 226-8502, Japan
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Takahashi Kenji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-Cho, Midori-Ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-Cho, Midori-Ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Okamoto Shoji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-Cho, Midori-Ku, Yokohama 226-8502, Japan
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