Photoluminescence Properties from $\beta$-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
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概要
- 論文の詳細を見る
We have succeeded in expitaxial growth of (101) and (110)-oriented $\beta$-FeSi2 films on (111)Si, (111)Si-buffered (111)YSZ and (111)YSZ substrates by metal organic chemical vapor deposition (MOCVD). All the films showed highly perfection in orientation irrespective of the substrate. After annealing at 900°C in Ar atmosphere, their photoluminescences (PL) around 1.54 μm were observed in the $\beta$-FeSi2 films grown on (111)Si and (111)Si-buffered (111)YSZ substrates, except for the film on (111)YSZ substrates. This suggests that the $\beta$-FeSi2/Si interface is a crucial structure for enhancement of PL and that the Si atom diffuses into $\beta$-FeSi2 is important factor to 1.54-μm PL.
- Japan Society of Applied Physicsの論文
- 2005-02-10
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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AKIYAMA Kensuke
Kanagawa Industrial Technology Research Institute
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Maeda Yoshihito
Department Of Electronic Engineering University Of Surrey
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Terai Yoshikazu
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Kaneko Satoru
Kanagawa Industrial Technology Research Institute, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan
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Terai Yoshikazu
Department of Materials Science, Osaka Prefecture University, 1-1 Gakuen-cho Sakai-shi, Osaka 599-8531, Japan
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Maeda Yoshihito
Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
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Akiyama Kensuke
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 228-8505, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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