Terai Yoshikazu | Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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概要
- 同名の論文著者
- Department Of Materials Science And Engineering Graduate School Of Engineering Osaka Universityの論文著者
関連著者
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Maeda Yoshihito
Department Of Electronic Engineering University Of Surrey
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Terai Yoshikazu
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Itakura Masaru
Department Of Applied Science For Electronics And Materials Kyushu University
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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AKIYAMA Kensuke
Kanagawa Industrial Technology Research Institute
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TERAI Yoshikazu
Department of Materials Science, Osaka Prefecture University
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MAEDA Yoshihito
Department of Energy Science and Technology, Kyoto University
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Terai Yoshikazu
Department Of Materials Sciences Osaka Prefecture University
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Kaneko Satoru
Kanagawa Industrial Technology Research Institute, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan
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Terai Yoshikazu
Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Terai Yoshikazu
Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka 599-853, Japan
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Terai Yoshikazu
Department of Materials Science, Osaka Prefecture University, 1-1 Gakuen-cho Sakai-shi, Osaka 599-8531, Japan
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Itakura Masaru
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-858, Japan
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Maeda Yoshihito
Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
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Maeda Yoshihito
Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-850, Japan
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Akiyama Kensuke
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 228-8505, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
著作論文
- Crystal Growth and Photoresponse of Al-doped β-FeSi_2/Si Heterojunctions
- Photoluminescence Enhancement in β-FeSi_2 by Annealing in Oxygen
- Epitaxial Growth of Al-Doped $\beta$-FeSi2 on Si by Ion Beam Synthesis
- Photoluminescence Properties from $\beta$-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
- Enhancement of 1.54 μm Photoluminescence in $\beta$-FeSi2 by Surface Oxidation