Epitaxial Growth of Al-Doped $\beta$-FeSi2 on Si by Ion Beam Synthesis
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概要
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Ion-beam-synthesized (IBS) $\beta$-FeSi2/Si(100) heterojunctions were observed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Clear epitaxial growth of $\beta$-FeSi2 on Si(111) and large crystal domains laterally grown on the surface were demonstrated in Al-doped samples. The optical processes near the heterojunction were examined by photoluminescence spectra measured on the different optical configurations. The epitaxial growth due to Al doping was found to be effective in reducing the density of nonradiative recombination centers and enhancing an electron-hole injection. Solid phase epitaxy (SPE) of Si taking place at the Al-doped interface was found to be the dominant contribution to lateral growth on the surface and epitaxial growth of $\beta$-FeSi2.
- 2005-04-15
著者
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Itakura Masaru
Department Of Applied Science For Electronics And Materials Kyushu University
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Maeda Yoshihito
Department Of Electronic Engineering University Of Surrey
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Terai Yoshikazu
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Terai Yoshikazu
Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka 599-853, Japan
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Itakura Masaru
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-858, Japan
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Maeda Yoshihito
Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-850, Japan
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