Enhancement of 1.54 μm Photoluminescence in $\beta$-FeSi2 by Surface Oxidation
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概要
- 論文の詳細を見る
We present the photoluminescence (PL) properties of surface oxidized $\beta$-FeSi2/Si(100) samples. X-ray photoelectron spectroscopy measurements showed the formation of a thick SiO2 layer at the surface when samples were annealed in air. In PL measurements, the samples annealed in air showed much larger PL intensity and activation energy for a nonradiative recombination than those annealed in vacuum. Surface oxidation is a new technique to enhance the PL at 1.54 μm of $\beta$-FeSi2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Maeda Yoshihito
Department Of Electronic Engineering University Of Surrey
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Terai Yoshikazu
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Terai Yoshikazu
Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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- Enhancement of 1.54 μm Photoluminescence in $\beta$-FeSi2 by Surface Oxidation