Photoluminescence Enhancement in β-FeSi_2 by Annealing in Oxygen
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Maeda Yoshihito
Department Of Electronic Engineering University Of Surrey
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Terai Yoshikazu
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
関連論文
- Crystal Growth and Photoresponse of Al-doped β-FeSi_2/Si Heterojunctions
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Magnetic Properties of β-FeSi_2 Semiconductor
- Effect of Surface Oxidation on Raman Spectroscopy of β-FeSi_2
- A17 SYNTHESIS OF NANO COMPOSIT ZEOLITE WITH SESQUIOXIDE IN RELATION TO ENVIRONMENTAL POLLUTION REMEDIATION
- Investigation of β-FeSi_2/Si Heterostructures by Photoluminescence with Different Optical Configurations
- Photoluminescence Enhancement in β-FeSi_2 by Annealing in Oxygen
- Epitaxial Growth of Al-Doped $\beta$-FeSi2 on Si by Ion Beam Synthesis
- Photoluminescence Properties from $\beta$-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
- Polarization and Leakage Degradation of Pt/SrBi2Ta2O9/Pt Capacitors and Their Recovery
- Enhancement of 1.54 μm Photoluminescence in $\beta$-FeSi2 by Surface Oxidation