Formation of β-FeSi_<2-x>Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• SADOH Taizoh

  Department of Electronics, Kyushu University

• MIYAO Masanobu

  Department of Electronics, Kyushu University

• Itakura Masaru

  Department Of Applied Science For Electronics And Materials Kyushu University

• MURAKAMI Yuji

  Department of Radiology, Graduate School of Biomedical Sciences, Hiroshima University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• YOSHITAKE TSUYOSHI

  Department of Surgery I, Saitama Medical Center, Saitama Medical School

• Miyao M

  Department Of Electronics Kyushu University

• OWATARI Masakazu

  Department of Electronics, Kyushu University

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