Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2

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概要

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• The low-temperature (${<}550$ °C) metal-induced lateral crystallization of amorphous Si1-xGex ($x$: 0–1) on SiO2 has been investigated under a wide range of electric fields (0–4000 V/cm). The increase in the lateral growth velocity with electric field was observed on the cathode side. However, when electric field exceeded a certain value, lateral growth velocity decreased. With increasing Ge fraction, critical field at which lateral growth velocity showed maximum decreased, and the maximum growth velocity increased. In addition, the directional growth of needlelike crystals aligned to the electric field was observed under an extremely high electric field (${>}2000$ V/cm). These new findings will be a powerful tool for achieving new poly-SiGe with highly controlled crystal structures.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-05-30

著者

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Kanno Hiroshi

  Department Of Electronics Kyushu University

• Kenjo Atsushi

  Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan

• Miyao Masanobu

  Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan

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