Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
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概要
- 論文の詳細を見る
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe_3Si) on group-IV-semiconductor (SiGe) was reviewed. By optimizing beam flux ratio (Fe:Si=3:1) and growth temperature (<130℃), a high quality hybrid structure, i.e., DO_3-type Fe_3Si on SiGe with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity and electrical properties with reasonable Schottky barrier height were obtained. Electrical injection and detection of spin-polarized electron in Si was successfully demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of SiGe channel with high mobility and Fe_3Si source/drain for spin-injection.
- 社団法人電子情報通信学会の論文
- 2010-06-23
著者
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MIYAO Masanobu
Department of Electronics, Kyushu University
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HAMAYA Kohei
Department of Electronics, Kyushu University
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Hamaya Kohei
Department Of Electronics Kyushu University
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Hamaya Kohei
Kyushu Univ. Fukuoka Jpn
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Miyao Masanobu
Department Of Electronics Kyushu University
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Miyao Masanobu
Kyushu Univ. Fukuoka Jpn
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- Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
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- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion
- Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
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- Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
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- Molecular Beam Epitaxy of Co
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
- Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
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