Significant Change in In-Plane Magnetic Anisotropy of (Ga,Mn)As Epilayer Induced by Low-Temperature Annealing
スポンサーリンク
概要
- 論文の詳細を見る
We find significant changes in the in-plane magnetic anisotropy of a (Ga,Mn)As epilayer by low-temperature annealing. Detailed magnetization and transport measurements reveal an enhancement in the contribution of a uniaxial anisotropy along [110] after annealing. The change in the magnetic anisotropy is affected by increasing hole concentration due to the annealing.
- Japan Society of Applied Physicsの論文
- 2004-07-01
著者
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Hamaya Kohei
Department Of Electronics Kyushu University
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kitamoto Yoshitaka
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Kato Hiroaki
Department Of Agricultural Chemistry Yamagata University
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Taniyama Tomoyasu
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Munekata Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Hamaya Kohei
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Taniyama Tomoyasu
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Kato Hiroaki
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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北本 仁孝
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering,
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