A Quaternary Magnetic Alloy Semiconductor (Ga,In,Mn)N
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概要
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The physical properties of the III-N-based quaternary magnetic alloy semiconductor (Ga,In,Mn)N prepared by RF-plasma-assisted molecular beam epitaxy are reported. Epilayers are either highly resistive or $n$-type, and exhibit paramagnetic behavior. Magnetic circular dichroism (MCD) spectra show the presence of spin-polarized band-to-band transition (3–3.5 eV), the Mn2+$d$-$d^{*}$ intra-ionic transition ($\sim$2.3 eV), and the transition associated with rather deep Mn acceptor level ($\sim$1.7 eV). Green-emission band ($\sim$2.3 eV) is observed in photoluminescence experiments for In-containing samples. Near-band-edge emission ($\sim$3.4 eV) is also obtained from multiple-quantum-well structures. $n$-type samples show negative magnetoresistance at RT, from which strong $s$,$p$-$d$ spin exchange interaction is inferred.
- Japan Society of Applied Physicsの論文
- 2004-07-01
著者
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Hayafuji Jun-ji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Oiwa Akira
Presto Japan Science And Technology Agency
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kondo Tsuyoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan
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Kondo Tsuyoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan
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Hayafuji Jun-ji
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuda, Midori-ku, Yokohama 226-8502, Japan
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