Investigation of Spin Voltaic Effect in a $ p$–$n$ Heterojunction
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概要
- 論文の詳細を見る
Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a $n$-GaAlAs/$ p$-GaInAs/$ p$-GaAs heterostructure are reported. It is found that, with appropriate heterojunction parameters, spin voltaic effect may survive across the heterojunction and give rise to detectable polarization-dependent photocurrent signals which are greater than those due to the magnetic-circular-dichroism background.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-07-25
著者
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Hayafuji Jun-ji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kondo Tsuyoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Kondo Tsuyoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Hayafuji Jun-ji
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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