Current-Induced Magnetization Reversal in a (Ga,Mn)As-Based Magnetic Tunnel Junction
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概要
- 論文の詳細を見る
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a $p$-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 106 A/cm2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 105 A/cm2.
- Japan Society of Applied Physicsの論文
- 2004-06-15
著者
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Hamaya Kohei
Department Of Electronics Kyushu University
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Oiwa Akira
Presto Japan Science And Technology Agency
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Moriya Rai
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-13 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Hamaya Kohei
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-G1-29 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Oiwa Akira
PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
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