HAMAYA Kohei | Department of Electronics, Kyushu University
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概要
関連著者
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HAMAYA Kohei
Department of Electronics, Kyushu University
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Hamaya Kohei
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Hamaya Kohei
Department Of Electronics Kyushu University
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MIYAO Masanobu
Department of Electronics, Kyushu University
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KITAMOTO Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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MUNEKATA Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Miyao Masanobu
Department Of Electronics Kyushu University
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KATO Hiroaki
Department of Urology
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TANIYAMA Tomoyasu
Department of Innovative and Engineering Materials, Tokyo Institute of Technology
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MORIYA Rai
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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OIWA Akira
PRESTO, Japan Science and Technology Agency
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Miyao Masanobu
Kyushu Univ. Fukuoka Jpn
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YAMAZAKI Yohtaro
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and
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北本 仁孝
東京工業大学
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ANDO Yuichiro
Department of Electronics, Kyushu University
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KASAHARA Kenji
Department of Electronics, Kyushu University
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YAMANE Kazutaka
Department of Electronics, Kyushu University
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SAWANO Kentarou
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University
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KIMURA Takashi
INAMORI FRC, Kyushu University
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Hamaya Kohei
Department Of Electronics Kyushu University:presto Japan And Technology Agency
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Ando Yuichiro
Department Of Electronics Kyushu University
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Kasahara Kenji
Department Of Cardiovascular Surgery Stanford University School Of Medicine U.s.a.
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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TANIYAMA Tomoyasu
Materials and Structures Laboratory, Tokyo Institute of Technology
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MUNEKATA Hiroo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Taniyama T
東工大応セラ研
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Hamaya Kohei
Kyushu Univ. Fukuoka Jpn
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kasahara Kenji
Department Of Electronics Kyushu University
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Yamane Kazutaka
Department Of Electronics Kyushu University
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Tokyo City University
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Munekata Hiro
Tokyo Inst. Of Technol. Yokohama Jpn
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Kitamoto Yoshitaka
Tokyo Inst. Of Technol. Yokohama Jpn
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Kitamoto Yoshitaka
R&d Center Digital Equipment Corporation Japan
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Kitamoto Yoshitaka
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Kato Hiroaki
Department Of Agricultural Chemistry Yamagata University
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Taniyama Tomoyasu
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kato Hiroaki
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Kimura Takashi
Inamori Frc Kyushu University
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Taniyama Tomoyasu
Materials and Structure Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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北本 仁孝
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering,
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TANIYAMA Tomoyasu
Materials and Structure Laboratory, Tokyo Institute of Technology
著作論文
- Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
- Ion Irradiation Control of Ferromagnetism in (Ga, Mn)As
- Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
- Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
- Significant Change in In-Plane Magnetic Anisotropy of (Ga, Mn)As Epilayer Induced by Low-Temperature Annealing
- Current-Induced Magnetization Reversal in a (Ga, Mn)As-Based Magnetic Tunnel Junction
- Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As