Ando Yuichiro | Department Of Electronics Kyushu University
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概要
関連著者
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Ando Yuichiro
Department Of Electronics Kyushu University
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Hamaya Kohei
Department Of Electronics Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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MIYAO Masanobu
Department of Electronics, Kyushu University
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ANDO Yuichiro
Department of Electronics, Kyushu University
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KASAHARA Kenji
Department of Electronics, Kyushu University
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YAMANE Kazutaka
Department of Electronics, Kyushu University
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HAMAYA Kohei
Department of Electronics, Kyushu University
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SAWANO Kentarou
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University
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KIMURA Takashi
INAMORI FRC, Kyushu University
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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Kasahara Kenji
Department Of Cardiovascular Surgery Stanford University School Of Medicine U.s.a.
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Kasahara Kenji
Department Of Electronics Kyushu University
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Yamada Shinya
Department Of Applied Biological Chemistry Faculty Of Agriculture Tohoku University
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Shinjo Teruya
Department Of Chemistry Faculty Of Science
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Yamane Kazutaka
Department Of Electronics Kyushu University
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Tokyo City University
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Miyao Masanobu
Kyushu Univ. Fukuoka Jpn
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Shiraishi Masashi
Department Of Marine Bioscience Faculty Of Biotechnology Fukui Prefectural University
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Kimura Takashi
Inamori Frc Kyushu University
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Yamada Shinya
Department of Electronics, Kyushu University
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Ando Yuichiro
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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KOIKE Mariko
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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SHIKOH Eiji
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
著作論文
- Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
- Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
- Dynamical Spin Injection into p-Type Germanium at Room Temperature