Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures

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概要

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• The effects of amorphous-Si (a-Si) layer (thickness: 0–20 nm) insertion on low-temperature (${<}450$ °C) solid-phase crystallization of a-Ge films (50 nm) were investigated. Upon the insertion of an ultrathin (${<}3$ nm) a-Si layer, incubation time increased and saturated crystallinity slightly increased. On the other hand, upon the insertion of a thick (${>}10$ nm) a-Si layer, incubation time significantly decreased and saturated crystallinity decreased. Grain sizes obtained at 425 °C were ${\sim}200$ and ${\sim}50$ nm upon the insertion of a-Si layers of 3 and 20 nm, respectively, which agrees with the results for saturated crystallinity. Moreover, upon the insertion of an intermediate-thickness (5–7 nm) a-Si layer, the nucleation rate and saturated crystallinity increased. These phenomena were explained on the basis of the Si-concentration profiles at interfaces. Thus, interface modulation is effective for realizing large-grain polycrystalline Ge.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-03-25

著者

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Ohta Hiroki

  Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan

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