Giant Ge-on-Insulator Formation by Si--Ge Mixing-Triggered Liquid-Phase Epitaxy
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概要
- 論文の詳細を見る
Formation of giant single-crystalline Ge-on-insulator (GOI) with 400 μm length is demonstrated by using seeding lateral liquid-phase epitaxy (L-LPE). High quality (100), (110), and (111) oriented single-crystals are obtained on Si substrates covered with SiO2. A mechanism based on the solidification temperature gradient due to Si--Ge mixing and the thermal gradient due to latent heat at the growth front is proposed. An additional experiment on quartz substrates well supports the importance of Si--Ge mixing as a trigger for giant L-LPE of Ge. This process opens up the possibility of Ge-based fully-depleted field-effect transistors with high electron and hole mobilities.
- Japan Society of Applied Physicsの論文
- 2009-04-25
著者
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TOKO Kaoru
Department of Electronics, Kyushu University
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TANAKA Takanori
Department of Electronics, Kyushu University
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MIYAO Masanobu
Department of Electronics, Kyushu University
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TANAKA Masanori
Department of Pure and Applied Sciences,University of Tokyo
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Toko Kaoru
Department Of Electronics Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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Tanaka Takanori
Department Of Electronics Kyushu University
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Tanaka Masanori
Department Of Electronics Kyushu University
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Tanaka Masanori
Department Of Aeronautics And Astronautics
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Tanaka Takanori
Department Of Adaptive Machine Systems Osaka University
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